| 摘要 |
PURPOSE:To confine carriers excited when a refractive index guiding and a well layer are quantized by making a value obtained by subtracting the thickness of the outside of an excitation region from thickness in the excitation region in the well layer larger than a value acquired by subtracting the same thickness of a barrier layer. CONSTITUTION:An N type GaAlAs layer 2 is grown on a GaAs substrate 1 in an epitaxial manner, and a striped groove is formed at a position where an excitation region is shaped. Well layers 3W and barrier layers 3b are grown alternately on the layer 2. Consequently, multiple quantum well structure consisting of the well layers 3w of four layers and the barrier layers 3b of three layers is grown, and a confinement layer is grown. A contact region 5 is formed. An insulating film 6, a P type electrode 7 and an N side electrode 8 are shaping film 6, a P type electrode 7 and an N side electrode 8 are shaped, and cleavage, etc. are executed, thus completing a semiconductor laser. A transverse mode by a refractive index guiding is controlled by multiple well structure itself, and the effect of confinement of carriers is also obtained through quantitzation. |
