发明名称 PRODUCTION UNIT FOR SEMICONDUCTOR
摘要 PURPOSE:To obtain N type ZnS, mass production properties thereof are excellent, by using a material, which does not react with a III group organic metal, as a reaction pipe material through which the III group organic metal is introduced. CONSTITUTION:A heater 2 is installed around a reaction pipe 1. A substrate holder 3 on which a substrate is placed is mounted into the pipe 1. Organic metal gases of a II group and a III group as an impurity are introduced from an organic metal introducing pipe 5 for the pipe 1. Hydrogen raw-material gas is introduced from a hydride raw-material introducing hole, and ZnS is grown on the heated substrate 4. An N type ZnS layer, resistivity thereof lowers, is obtained becuase the pipe 5 is made of BN.
申请公布号 JPS60198737(A) 申请公布日期 1985.10.08
申请号 JP19840054172 申请日期 1984.03.23
申请人 TOSHIBA KK 发明人 HIRAHARA KEIJIROU;KAMATA ATSUSHI;KAWACHI MASARU
分类号 H01L21/365;H01L33/28 主分类号 H01L21/365
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