| 摘要 |
PURPOSE:To reduce an occupying area largely, and to improve the degree of integration by previously arranging a plurality of one first channel type MIS transistors as a fundamental cell to a matrix shape while their directions are replaced alternately and constituting the titled device through a master slice system. CONSTITUTION:A semiconductor substrate in which a plurality of one MIS transistor as a fundamental cell with independent source region (or a drain region) 12, drain region (or a source region) 13 and a gate electrode 14 are disposed previously to a matrix shape while their directions are replaced alternately is employed, and the titled device is constituted through a master slice system. 21 represent first conductor patterns, 22 second conductor patterns, 23 sources or drains or contacts among the gate electrodes and the first conductor patterns and 24 contacts among the first conductor patterns and the second conductor patterns in the figure. According to the constitution, source/drain length is reduced largely, and the occupying area of a ROM can be minimized sharply by alternately changing the directions of the fundamental cells 11. |
