| 摘要 |
PURPOSE:To obtain with ease a profile of absolute values related to the concentration distribution of an impurity in a semiconductor substrate by a method wherein comparison is made between the impurity concentration in a specimen and the absolute concentration of the ions of an element under measurement driven into a part to be tested of the specimen during a measurement conducted by using secondary ion mass spectrometric analysis. CONSTITUTION:The absolute value of the peak concentration of injected ions is theoretically determined by using the acceleration voltage and the dose size. Of the two regions 1a and 1b equipped with the same profile in a semiconductor substrate 1, ions are driven only into the region 1a. The region 1a is exposed to etching while the quantity of ions or a current (y2) is determined as indicated in a mass spectrometer. The absolute value of an ion injection peak value 1c is determined in view of the depth (y1) and the concentration (x1). The absolute value of 1d is determined by relative comparison with the ion injection peak value 1c. A current 1e is obtained by changing the specimen setting. The absolute value of the current 1e is equal to the absolute value 1d. The concentration 1f that is the wanted quantity is determined by relative comparison with the current 1e. |
