| 摘要 |
PURPOSE:To prevent image-picture defect, deterioration in photosensitivity, after images, and the like by making the crystal grain coarse by heat treatment of an electrode on which a photoconductive film is to be formed. CONSTITUTION:An n<+> type vertical CCD2 and a charge accumulated diode 3 are formed in a p type Si substrate 1 by adjacency. Next, a poly Si electrode 4 serving as a transfer gate electrode is formed on the CCD2. Then, an oxide film 5 is so formed as to bury the electrode 4. An electrode 6 is formed on the film 5 and the diode 3. Then, an oxide film 7 is formed flatly over the whole surface. A flat electrode 8 is formed on the film 7 and the top of the electrode 6. Sweep is performed in the direction of an arrow mark by irradiating the electrode 8 with laser beams. Thereby, the crystals of the electrode 8 grow and the crystal grain becomes coarse. An amorphous Si film 9 with a thickness necessary for photoelectric conversion is formed, and a transparent conductive film 10 is formed thereon. This manufacture enables the increase in size of the crystal grain of the electrode 8, resulting in the prevention of the systematic defect formation of the film 9 ascribing to the crystal grain boundary of the electrode 8. |
