发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a semiconductor device, wherein any void is never generated, and with a high heat resistance, a superior adhesive force and a good reliability by a method wherein a specific conductive bonding agent composition is used in the manufacture. CONSTITUTION:Aromatic diisocyanate and anhydride of tricarboxylic acid are caused to react at a roughly equal mol under an existence of basic solvent setting the content of resin component as 40wt% or more. Before this reaction, during this reaction or after this reaction, 0.1-1.0mol of lactam is added to 1mol of aromatic diisocyanate, 0.01-0.5mol of alcohol and/or oxime is, at need, added to 1mol of aromatic diisocyanate and the reducing viscosity is set at 0.10-0.27. This polyimide resin and a composition consisting of a conductive filling material are applied on the tab part of the lead frame in the desired pattern, the solvent is completely removed at the temperatures less than 100 deg.C and a bonding agent layer is formed. Then, a semiconductor chip is bonded by heating to the tab part at the temperatures of 250-350 deg.C.
申请公布号 JPS6116534(A) 申请公布日期 1986.01.24
申请号 JP19840137454 申请日期 1984.07.03
申请人 HITACHI KASEI KOGYO KK 发明人 MAEKAWA IWAO;MAKINO DAISUKE
分类号 C08L79/08;H01L21/52;H01L21/58 主分类号 C08L79/08
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