发明名称 SUPERLATTICE DEVICE
摘要 Semiconductor devices having submonolayer superlattices are described. These devices may have periodic compositional variations in a direction parallel to the substrate surface as well as in the perpendicular direction. Such superlattices are useful in numerous types of devices including lasers, transistors, etc.
申请公布号 JPS6174327(A) 申请公布日期 1986.04.16
申请号 JP19850201945 申请日期 1985.09.13
申请人 AMERICAN TELEPH & TELEGR CO <ATT> 发明人 AASAA CHIYAARUZU GOZAADO;PIEERU MAAKU PETOROFU
分类号 H01L29/812;H01L21/20;H01L21/203;H01L21/26;H01L21/338;H01L29/06;H01L29/15;H01L29/775;H01L29/778;H01L29/80;H01L47/00;H01S5/00 主分类号 H01L29/812
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