| 摘要 |
PURPOSE:To decrease extremely the damage of wafers and improve the yield, by utilizing the effect to the manufacturing process of the semiconductor light emitting diode that it can be prevented for the semiconductor compound to diffuse into the Au film for lead bonding under heat treatment if the Pd film is provided. CONSTITUTION:The wafer of double hetero structure is formed on the substrate 1 of n-type InP, by sequential and continuous epitascial growth of the buffer layer 2 of n-type, the active layer 3 of InGaAsP, the clad layer 4 of p-type InP, and the gap layer 5 of p-type InGaAsP. After the insulation film 6 of SiO2 to make the current path narrow is stuck on the surface of the gap layer 5 of p-type InGaAs, and the aperture 7 to force the current flow is installed by photoresist, the ohmic contact metal 8 for p-side is stuck, which forms the ohmic contact after heat treatment. After the substrate 1 of n-type InP is polished and the ohmic contact metal 9 for n-side, the Pd film 10 and Au film 11 are continuously stuck with evaporation method, the aperture 12 to take out the photo output is installed by chemical etching and then the ohmic contact for (n) side and the Au film 11 for lead bonding are formed at the same time. |
