| 摘要 |
PURPOSE:To enable to suppress the generation of side etching of polysilicon to the minimum by a method wherein a process, in which a layer having excellent tight adhesiveness with the polysilicon and the photoresist to be turned to a mask for the polysilicon is formed on the upper part of the polysilicon, a process in which photoresist is coated on the upper part of the above- mentioned layers, and a device in which a desired cut-pattern is formed on the photoresist and an etching is performed successively on the above-mentioned layer and the polysilicon using said pattern as a mask, are provided. CONSTITUTION:A silicon oxide film 30, for example, as a layer having excellent tight adhesiveness with polysilicon 20 and a photoresist 40, is formed on the upper part of the polysilicon 20 using a low temperature oxide film growing device. Then, a photoresist 40 is coated on the upper part of the polysilicon oxide film 30, and a baking process is performed. Subsequently, the prescribed cut-pattern is formed on the photoresist 40 by performing an exposing and developing processes. Then, a dry etching is performed on the silicon oxide film 30 and the photoresist 40 sucessively using the photoresist 40 as a mask. Besides, the silicon film 30 and the photoresist 40 are turned into the mask of polysiliocn 20 after an etching is performed on the silicon oxide film 30. |
