SEMICONDUCTOR MANUFACTURING EQUIPMENT

摘要

PURPOSE:To accelerate the forming speed of thin film on a substrate by means of augmenting the intensity of illumination on the substrate by approaching a light source to the substrate by a method wherein multiple light source bodies respectively comprising a quartz glass tube provided with a linear lamp utilized as a light source are arranged in a reaction chamber. CONSTITUTION:Five light source bodies 12a-12e respectively comprising a cylindrical quartz glass tube 10 provided with a linear lamp 2 utilized as a light source 12 are arranged in a reaction chamber 1 so that a substrate 5 may be irradiated with augmented intensity of illumination by means of approaching the light source 12 to the substrate 5 up to an arbitrary distance. Through these procedures, the forming speed of thin film on the substrate 5 may be accelerated without unnecessarily augmenting the output of light source 12. Besides, the illumination intensity on the substrate 5 may be distributed evenly to some extent in the direction rectangular to the axles of light source bodies 12a-12e.