| 摘要 |
PURPOSE:To enable to selectively grow a polycrystalline silicon film of the surface of the silicon substrate by adopting a decompression vapor-phase growth method. CONSTITUTION:Ammonia gas, oxygen gas, methane gas and either of a nitrogen element-containing compound and a carbon element-containing compound of both compounds thereof are added to the chlorine compound-containing reaction gas, a decompression vapor-phase growth is performed on the silicon substrate and a polycrystalline silicon film is made to selectively grow on the silicon substrate. Ammo nia gas and so forth are added to reaction gas, for example, and when a decompression vapor-phase growth is performed, the plural crystal species of silicon grow first on a region on the silicon substrate, where silicon is exposing, an epitaxial growth progresses in order, but when ammonia gas exists more, the ammonia gas is decom posed during the crystal growth of silicon, silicon nitride is generated, this silicon nitride results in obstructing a crystallization of silicon being made to epitaxially grow, and as the result, it follows that the polycrystalline silicon film is formed, while an epitaxial growth of silicon is never made of the surface of an insulator of silicon nitride. As result, the polycrystalline silicon film is selectively formed on the surface of the silicon substrate. |
