| 摘要 |
PURPOSE:To apply patterning photoresist on a semiconductor substrate without cutting in suitable conditions for forming electrodes, by burying a groove with resist, whose surface tension is small, and making the step shape gentle, when the electrodes are patterned. CONSTITUTION:A groove 31 and an oxide film 22 are formed on a silicon substrate 21. The groove 31 is buried with a resist layer 11 so as to improve the shape of a cross section. A resist layer 12 for lift-off is applied. A pattern for forming a metal electrode layer is formed. The negative resist layer 11 is used for improving the shape of the cross section, and accuracy is not required. On the silicon substrate, on which the resist layer 11 and 12 are formed, a metal electrode layer 31 comprising a compound metal layer of Ti-Pt- Au is formed. The device is immersed in an organic solvent. The positive resist 12 and the unnecessary part of the metal electrode layer 31 are removed by lift-off. A specified pattern for the metal electrode layer 31 is formed. Then, the negative resist 11 is removed. Thereafter the silicon substrate is divided into dices, and a capacitor is completed. |
