发明名称 MANUFACTURE OF FIELD EMITTER EXHIBITING HIGHLY STABLE ELECTRON EMISSION CHARACTERISTIC
摘要 <p>PURPOSE:To obtain a field emitter having excellent current stability and electron emission characteristic by thermally treating TiC mono-crystal emitter under hydrocarbon gas to form a carbon film on the surface then applying strong field under super high vacuum. CONSTITUTION:TiC monocrystal emitter is heated under hydrocarbon gas with the temperature of 900-1,400 deg.C to form a carbon film. Then electron beam is emitted for about 30min with the total current of 10-20muA under super high vacuum for a chip formed with a carbon film on the surface to apply strong field stronger than 10<7>V/cm. Consequently, a field emitter having excellent emission performance is obtained.</p>
申请公布号 JPS61153918(A) 申请公布日期 1986.07.12
申请号 JP19840275221 申请日期 1984.12.27
申请人 NATL INST FOR RES IN INORG MATER 发明人 ISHIZAWA YOSHIO;OSHIMA CHUHEI;OTANI SHIGEKI;SODA RYUTARO;SHIBATA YUKIO;AOKI SUSUMU
分类号 H01J9/02 主分类号 H01J9/02
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