发明名称 |
MANUFACTURE OF FIELD EMITTER EXHIBITING HIGHLY STABLE ELECTRON EMISSION CHARACTERISTIC |
摘要 |
<p>PURPOSE:To obtain a field emitter having excellent current stability and electron emission characteristic by thermally treating TiC mono-crystal emitter under hydrocarbon gas to form a carbon film on the surface then applying strong field under super high vacuum. CONSTITUTION:TiC monocrystal emitter is heated under hydrocarbon gas with the temperature of 900-1,400 deg.C to form a carbon film. Then electron beam is emitted for about 30min with the total current of 10-20muA under super high vacuum for a chip formed with a carbon film on the surface to apply strong field stronger than 10<7>V/cm. Consequently, a field emitter having excellent emission performance is obtained.</p> |
申请公布号 |
JPS61153918(A) |
申请公布日期 |
1986.07.12 |
申请号 |
JP19840275221 |
申请日期 |
1984.12.27 |
申请人 |
NATL INST FOR RES IN INORG MATER |
发明人 |
ISHIZAWA YOSHIO;OSHIMA CHUHEI;OTANI SHIGEKI;SODA RYUTARO;SHIBATA YUKIO;AOKI SUSUMU |
分类号 |
H01J9/02 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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