| 摘要 |
PURPOSE:To make it possible to arrange a wiring pattern with high reliability, by selectively heating a silicate glass film, which is isolated from an Al pattern by a film, whose heat conductivity is low in reflow treatment. CONSTITUTION:An Al pattern 2 is provided on, e.g., an SiO2 layer 1 to a thickness of about 1mum. An SiO2 layer 3 and a PSG layer 4 are sequentially deposited on the surface of the substrate. Said SiO2 layer 3 and the PSG layer 4 are formed by a conventional technology such as plasma chemical vapor deposition method. The thicknesses of the layers are about 0.5mum. Then electron beams, whose energy is, e.g., 10 kev and current density is 10A/cm<2>, is applied on the PSG layer 4 for 1 msec. The PSG layer 4 absorbs the electron beam, and the temperature is increased. Thus reflow is carried out and the surface becomes smooth. |
