| 摘要 |
PURPOSE:To enhance the withstand voltage in a GaAsFET without loss of high frequency characteristic by coating the surface between a gate and a drain or between a source and a drain through an insulating film with an electrode of the same potential as the source. CONSTITUTION:An N<+>-type diffused layer 2 of low specific resistance to become source.drain.contact and an N-type layer 3 of high specific resistance to become a channel are formed on a semi-insulating GaAs substrate 1. A gate electrode 4 is formed of aluminum, and a Schottky barrier is formed in a boundary to the layer 3. Source.drain electrode 5 is formed of Au.Ge/Ni/Au, and ohmically contacted with the layer 2. An electrode 7 connected with the source is formed to cover between a gate and a drain through an insulating film 6. A high withstand voltage is obtained by forming a stable depletion layer 8 on the surface of the layer 3 to become a channel at FET operating time. |
