| 摘要 |
PURPOSE:To dispense with a separative diffusion layer by a method wherein an one reverse-conductive-type region is used as the channel formation layer for a MOS transistor, the p-n-junction-formation layer for a Zener diode, and the base layer for a bipolar transistor. CONSTITUTION:An n-type epitaxial layer 2 and an n<+> type region 58 are formed on a p-type silicon substrate 1. An n-channel MOS transistor 11 consists of an electrode formed on an oxide film 6, and electrodes 15 and 16 ohmically contacting with n-type regions 55 and 56. In this case, a drain electrode 16 is used also as cathode electrode for the Zener diode, ad a Zener diode 12 consists of a p-type region 4 and the n-type region 56. A bipolar transistor 13 is formed with the n-type region 57 as a emitter, the region 4 as a base, and the layer 2 and region 58 as collectors.
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