| 摘要 |
PURPOSE:To provide a lateral transistor structure having strong alpha-ray-proof, by forming a P-type diffused layer between an N-type buried layer and an N-type epitaxial layer, and by preventing electrons and positive holes produced in the P-type Si substrate from penetrating into the N-type epitaxial layer. CONSTITUTION:After Sb is diffused into a P-type Si substrate 1 to form an N-type buried layer 2, a P-type diffused layer 5 is formed by doping B, an N-type epitaxial layer 6 is grown, a silicon dioxide 3, silicon nitride 4 and silicon dioxide 15 are deposited, and the etching forms a convex configuration. A silicon dioxide film 18 is formed, polycrystalline silicon 17 is buried, B is doped therein, the silicon dioxide 15 is removed, and then the polycrystalline silicon 17 outside of the electrode taking-out portion is oxidized to form a silicon dioxide 3. P-type diffused layers 7, 11 are formed, an opening is bored through the silicon dioxide 3 and silicon nitride 4, an N-type polycrystalline silicon 10 is deposited, an N-type diffused layer 8 is formed, and an emitter electrode 12, base electrode 13, and collector electrode 14 are formed to result in a transistor. |
