| 摘要 |
PURPOSE:To obtain a high resolution pattern which is not subjected to the influence of steps by a method wherein a pattern forming organic film, on which a bleaching or fading function for radioactive rays is given, is formed on radiation ray sensitive resin. CONSTITUTION:The steps on a substrate are flattened by coating a thick organic film 4, an inorganic film 5 to be used to isolate from the resist for formation of a pattern is coated on the organic film, a resist 2 is coated on the inorganic film, and a flat triple-layer structure resist is formed. After a bleaching function is given to the above-mentioned triple-layer structure resist using the radiation rays such as ultraviolet rays and it is completely bleached, a pattern forming organic film 3, having the transmittance of 80% or above and a water-soluble property for the developing solution such as alkaline aqueous solution used in the developing process performed on the pattern forming resist 2, is formed. The organic film 3 gives a contrast enhancement effect on the positive resist 2 when a resist pattern 2a is formed. A reactive ion etching (RIE) is performed on the inorganic film 5 using the positive resist 2a as a mask, and a pattern 4a which is not subjected to the influence of a stepping is obtained by performing RIE with oxygen on the organic film 4 using the inorganic film 5a. |
