SOLID-PHASE EPITAXIAL GROWTH METHOD FOR NISI2 FILM

摘要

PURPOSE:To easily obtain the crystallizability of good quality by a method wherein a multilayer film consisting of Si and Ni is formed in such a manner that the compositional ratio of NiSi2 is obtained at the substrate temperature of 350 deg.C or below, and a single crystal film is formed by performing a solid-state epitaxial growth method at the temperature range of 350-750 deg.C. CONSTITUTION:After a laminated film of 30-300Angstrom in thickness is formed on an Si single-crystal substrate 2 at the substrate temperature of 350 deg.C or below in such a manner that an Ni film 1 and an Si film 3 are superposed alternately at the desired cycle and that the entire compositional ratio is brought to Si/Ni=2-1.8, which said laminated film is turned into an NiSi2 film by performing an annealing, and then an NiSi2 single crystal film 4 is epitaxially grown by heating the above-mentioned NiSi2 film at the temperature range of 350-750 deg.C. As a result, the film of the same quality as the film obtained by performing a simultaneous vapor-deposition method in the degree of simplicity the same as the solid-phase epitaxial growth method heretofore in use can be obtained without removal of Si atoms from the Si substrate.