| 摘要 |
PURPOSE:To overcome the loss due to attenuation of the amplitude of a carrier because of the carrier diffused into a semiconductor by adopting a carrier wave diffusion preventing structure enclosing the carrier wave. CONSTITUTION:The amplitude of the carrier wave interacting an electromagnetic wave is decreased because the carrier is diffused into the semiconductor. The diffusion of the carrier is eliminated and overcome by three methods; (1) using a semiconductor thin film, (2) using a potential barrier to a carrier wave and (3) using enclosing action by electric field. In using a semiconductor thin film, the diffusion of the carrier wave is limited automatically because the semiconductor thin film 3 is definite. The thickness of the semiconductor thin film is nearly the device length or equivalent preferably.
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