| 摘要 |
PURPOSE:To manufacture the titled pressure sensor at low cost in a microminiature shape through a semiconductor technique by forming a gate electrode, which can be moved and deformed by pressure, onto a gate insulating film through a cavity chamber or an insulating layer. CONSTITUTION:The titled pressure sensor is manufactured by utilizing a change by an electric field applied to a channel of drain currents in a field effect type transistor and a movement and a deformation by pressure of a gate electrode by shaping the gate electrode on the upper section of the channel onto a gate insulating film through a cavity chamber or an expansible insulating film, the variation of a space between the gate electrode and the gate insulating film and the alteration of field strength applied to the channel. The pressure sensor is formed in a structure in which a source 2 and a drain 3 are shaped to an silicon substrate 1 and a gate insulating film 5 consisting of a metallic oxide is formed to the upper section of the channel 4, and the electric field applied to the channel is changed by employing the gate electrode 6 on the gate insulating film 5. Accordingly, elements can be microminiaturized and mass-produced, and a diaphragm material can be selected over a wide range.
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