发明名称 PROJECTION EXPOSURE METHOD
摘要 PURPOSE:To improve yield on the manufacture of a semiconductor device by measuring relative positional displacement among a plurality of positioning marks for a reference mask and a plurality of positioning marks for a photo- mask and detecting the precision of a mask-pattern transferred onto a substrate to be exposed. CONSTITUTION:A plurality of first positioning marks 3 on a photo-mask 1 arranged in front of an optical system 4 and a plurality of second positioning marks 6 formed at the same disposal pitches as the positioning marks 3 on a reference mask 7 arranged between the optical system 4 and a substrate 5 to be exposed are projected and exposed onto the substrate to be exposed at the same time as a mask-pattern 2 is projected and exposed, and developed. The positional displacement DELTAd of the positioning marks 3 on the photo-mask 1 to the positioning marks 6 on the reference mask 7 transferred onto the substrate to be exposed 5 is measured, and the accuracy of exposure at every substrate to be exposed 5, the accuracy of transfer of the pattern, can be detected easily by the quality of the displacement. Accordingly, the accuracy of exposure can be compensated on occasion in the manufacturing process, etc. of a work-mask, thus improving yield on manufacture.
申请公布号 JPS61222128(A) 申请公布日期 1986.10.02
申请号 JP19850062444 申请日期 1985.03.27
申请人 FUJITSU LTD 发明人 OOTA KAZUTOSHI
分类号 H01L21/30;G03F7/20;G03F9/00;H01L21/027;H01L21/469;H01L21/66;H01L21/67;H01L21/68 主分类号 H01L21/30
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