| 摘要 |
PURPOSE:To make it possible to obtain a high conversion efficiency, by determining the thickness of tin oxide constituting a transparent electrode within a specified range. CONSTITUTION:The thickness of a transparent electrode 3 comprising tin oxide is made to be 5,000-8,000Angstrom . Nor all of the photons, which are absorbed by an a-Si:H layer 15, contribute to photoelectric conversion. Certain percent of the photons is dissipated as the form of heat energy. The optimum thickness of the SnO2 film 3 is obtained from the wavelength dependence of a quantum collecting efficiency, which is the rate of the photons contributing to the photoelectric conversion. The value is 5,000-8,000Angstrom . When the thickness of the SnO2 film 3 is larger or smaller than this range, the photon absorbing rate is decreased. Therefore, in this method, the photon absorbing rate by an amorphous silicon layer can be made high, and the conversion efficiency can be made high. |
