发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device has a plurality of memory cells arranged in a two-dimensional matrix array, word lines for connecting memory cells of each row to a row decoder, and bit lines for connecting memory cells of each column to a column decoder. The word lines include first word lines each of which is connected to several memory cells in each column section of one row. The word lines also include a second word line connected to the first word lines of each row through corresponding switches. In response to a column address signal, one of the switches of each row is turned on, so that one of the first word lines is connected to the corresponding second word line.
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申请公布号 |
US4618945(A) |
申请公布日期 |
1986.10.21 |
申请号 |
US19830517419 |
申请日期 |
1983.07.26 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
SAKURAI, TAKAYASU;IIZUKA, TETSUYA |
分类号 |
G11C11/4096;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/4096 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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