发明名称 Semiconductor memory device
摘要 A semiconductor memory device has a plurality of memory cells arranged in a two-dimensional matrix array, word lines for connecting memory cells of each row to a row decoder, and bit lines for connecting memory cells of each column to a column decoder. The word lines include first word lines each of which is connected to several memory cells in each column section of one row. The word lines also include a second word line connected to the first word lines of each row through corresponding switches. In response to a column address signal, one of the switches of each row is turned on, so that one of the first word lines is connected to the corresponding second word line.
申请公布号 US4618945(A) 申请公布日期 1986.10.21
申请号 US19830517419 申请日期 1983.07.26
申请人 TOKYO SHIBAURA DENKI KABUSHIKI KAISHA 发明人 SAKURAI, TAKAYASU;IIZUKA, TETSUYA
分类号 G11C11/4096;(IPC1-7):G11C7/00 主分类号 G11C11/4096
代理机构 代理人
主权项
地址