| 摘要 |
PURPOSE:To weaken the unnecessary magnetic pole near the connecting part and to improve the transferring characteristic and the reproducibility by forming three types or above of areas in which the ion implantation depth is different, in the ion implantation area near the connecting part. CONSTITUTION:An ion implantation mask 11 is formed, and the ion is implantated in the conditions that the ion implantation depth is shallow. Next, the ion implantation mask 12 is formed near the connecting part, and the ion is implantated in the conditions that the ion implantation depth is deep. Next, after the implantation of Ne<+> ion for restraining the abnormal bubble is executed, an SiO2 layer 10 is fitted to the surface of a magnetic film 7, thermal treatment is executed and the implantation layer of the ion is stabilized and processed. After this, the conductive pattern of the function part is formed, a inter-layer insulating film 11 is formed and a 'Permalloy(R)' transferring line 3 is formed. Thus,the bubble transferring characteristic in the connecting part is improved.
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