| 摘要 |
PURPOSE:To execute the replacement of a memory cell even in case of a leak current failure in a cell, and to obtain an efficient redundant mechanism by separating a power source connecting line cutting part of a memory cell group containing a defective cell. CONSTITUTION:When a defective memory cell bit 8 is detected in a memory cell group part 1, a memory cell line (or a row) 9 to which said bit belongs is replaced with a redundant memory cell line (or a row) 10 in a redundant memory cell group part 2 by a redundant address indicating input 7 and an address converting part 5. At the same time, a necessary power source supply line part 12 of a memory cell power source connecting line cutting part 11 is cut. Accordingly, among cells, for instance, a cell in which a joint leak of a driver transistor exists is replaced with a non-defective cell.
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