| 摘要 |
PURPOSE:To realize uniform growth of thin film on a substrate by utilizing the shape providing a cylindrical protruded part which guides the flow of gas as a reaction gas introduction nozzle during the thermal decomposition vapor growth. CONSTITUTION:With a nozzle 1 formed by welding a quartz disk 2 having many pin-holes to an opening which is formed by widening the end part 1a of quartz nozzle 1 just like an end part of trumpet and also welding a protruded part 3 made of cylindrical quartz, the vapor growth of organic metal is carried out. Namely, as a result of epitaxial growth of gallium arsenide by supplying the trimethylgallium and arsine reduced by high-purity hydrogen gas to the reaction system providing a substrate crystal 4 through the nozzle 1, uniform growth allowing fluctuation of thickness within + or -5% can be attained in the region except for the periphery ranging from 3-5mm.
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