| 摘要 |
Process for liquid-phase epitaxial deposition on a substrate of an alloy R0R1 ... Rn, considered as being composed of binaries Ri, where i = 0, ... n, and n is an integer, characterised in that: a. An epitaxial bath is prepared, comprising all the elements making up the binaries Ri where i = l, ... n in proportions making it possible, according to the phase diagram, to obtain the alloy R0 ... Rn in the case of a temperature T1 and additionally optionally comprising the elements making up R0 in a lower proportion than the proportion envisaged according to the phase diagram; b. This bath is placed in contact with the oriented binary compound R0, at a temperature T which is lower than T1 and which takes supersaturation into account, the binary R0 surmounting the bath; c. The said bath surmounted by the said binary R0 is placed in contact with the substrate to permit the deposition of the said alloy R0 ... Rn on the said substrate at the temperature T. The invention also relates to the semiconductor devices comprising an alloy layer produced according to this process.
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