| 摘要 |
PURPOSE:To provide a high light shielding property to a light shielding layer with a 3-layer structure, to increase the adhesion of the layer to a substrate and to prevent peeling during use by adding a little chromium oxide to the chromium layer of the light shielding layer together with merallic Cr. CONSTITUTION:A low reflection layer 3 is formed on a transparent substrate 4, and on the layer 3 a metallic Cr layer 6 contg. a little chromium oxide is formed in >=800Angstrom thickness by vapor deposition or other method using a mixture of metallic Cr with chromium oxide in a prescribed ratio. A low reflection layer 2 is further formed to manufacture a photomask having a light shielding layer with the 3-layer structure. The light shielding layer has a high light shielding property with >=4 transmission density and high adhesion to the substrate, and peeling is not caused even if the photomask is used repeatedly. Accordingly, this photomask is used as a photomask with high durability and high resolution for manufacturing a precise pattern for a semiconductor integrated circuit, etc. |
