| 摘要 |
PURPOSE:To enable a high-output light-emitting element to be attained using an indirect gap semiconductor material, by constructing the title element using a semiconductor material which has been changed from an indirect transition type electron structure to a direct transition type electron structure by introducing and disposing an impurity in the empty hole portion of the zincblende type structure. CONSTITUTION:A material of the zincblende type structure is used as a semiconductor material having the indirect transition type electron structure, and the indirect transition type electron structure is changed to the direct transition type electron structure by introducing and disposing an impurity in the empty hole portion of this zincblende type structure. A semiconductor light-emitting element is constructed using the semiconductor material obtained in this manner. If the semiconductor light-emitting element is made into a light emitting diode, for instance, a GaP semiconductor material is used, and a P-N junction is constructed by a P-type GaP/He superlattice layer 10 and an N-type GaP/He superlattice layer 12. If the semiconductor light-emitting element is made into a semiconductor laser, for instance, GaP is used as the semiconductor material, and a double-hetero structure is constructed by an N-type AlGaP clad layer 16, an N-type GaP/He superlattice active layer 18 and a P-type AlGaP clad layer 20. |
