| 摘要 |
PURPOSE:To shorten exposure time, by applying a resist film having sensitivity in a long wavelength on an amorphous silicon film, and exposing the back side of a transparent substrate to light in a specified wavelength region with a gate electrode as a mask. CONSTITUTION:Chromium is formed on a transparent substrate 1 as a film. A gate electrode 2 is obtained by a photolithography machining method. Then, on the gate electrode, a silicon nitride insulating film and an amorphous silicon film are formed. Resist, which has sensitivity in the wavelength region of 4,800-7,000Angstrom , is applied. Then, the back side of the transparent substrate is exposed to light from an ordinary light source, e.g., a W lamp, for about one minute. Thus a resist pattern 5 is obtained. The amorphous silicon film 4 is isolated and machined by a plasma etching method using Freon gas. A chromium aluminum film is formed by sputtering. Thereafter, the resist is removed. A source and rain gap 7 is formed. Thus the exposure time can be reduced to a large extent. |
