| 摘要 |
PURPOSE:To make the height of a bonding wire low and the thickness of the device thin, by crushing linearly the bonding wire in a manner is which the height of the wire is made nearly equal to that of a semiconductor/pallet and that of a substrate. CONSTITUTION:A semiconductor pellet 11 and the substrate 12 are connected by a bonding wire 13 constituted of thin wire of gold, Al, etc. After bonding, the wire 13 is linearly crushed so as to have the nearly equal height to the surfaces of a substrate 12 and the pellet 11. As the result of this process, the height of wire 13 from the surface of substrate 12 is made 0.05-0.1mm. Thus the device has no high loop part as conventional ones have, so that its thickness is reduced by that amount. |
