| 摘要 |
PURPOSE:To avoid a defect caused by misconnection and improve heat radiation and surge resistant properties by a method wherein diodes formed on the surface of a semiconductor substrate are connected in series to constitute a high voltage diode. CONSTITUTION:Apertures are made in a heat oxidized film on an N-type Si substrate 21 and separated by P-type layers 23-26. Apertures are made in the SiO2 film 22 again and P-type layers 27-30 and successively N<+>type layers 36-39 are formed. Further, apertures are selectively made in the SiO2 film 22 and Al evaporated wirings 39-42 are applied and covered with a protective film 22. A high dielectric strength diode is completed by molding the formed layers in a plastic package. When a positive voltage is applied to the wirings 42 and a negative voltage is applied to the wiring 43, if the voltage is smaller than the summation of the voltages of the diodes 31-34, a large current does not flow between the wirings. With this constitution, defective parts produced by misconnections can be avoided and, as devices 31-34 are separated from each other on the substrate surface, heat radiation property is improved and as a result, surge resistant property can be also improved.
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