| 摘要 |
PURPOSE:To control the depth and the shape of a groove in an inverse quadrangular pyramid table shape in a self-aligning mode, by implanting oxygen ions in one main surface of a silicon substrate, forming an embedded oxide film layer, and selectively etching a silicon layer by using anisotropic etching liquid of silicon. CONSTITUTION:Oxygen ions are implanted from an upper part of a silicon dioxide film 12, and an oxygen ion implanted layer 13a is formed. The layer 13a is converted into an embedded oxide film layer 13b. The silicon dioxide film 12 is removed. Single crystal silicon 14 is deposited on a remaining surface silicon layer 11b. Then, an element isolating region 15 is formed, and a silicon dioxide film 16 is grown. With the silicon dioxide film 16 as a mask, the silicon substrate 11b and the single crystal silicon 14 undergo V groove etching by using hydrazine hydrate. On the etched surface, a 111 face appears. The side wall of the groove is surrounded by said surface. The etching liquid have good selectivity with respect to the silicon dioxide film and silicon. When the size of a window and the thickness of the single crystal silicon layer 14 are made adequate, the shape of an inverse quadrangular pyramid table is obtained.
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