发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To perform a trimming on the resistors located in a semiconductor device even after the semiconductor device has been packaged by a method wherein the operation of an EPROM is controlled corresponding to the resistance value of the resistor on which a trimming is performed. CONSTITUTION:A trimming is performed based on the relation between the control voltage V1-V3 generated on the gate of EPROM 21-23 and the threshold voltage Vth of the EPROM 21-23. To be more precise, when the threshold voltage Vth of the EPROM 21-23 has the voltage value higher than that of the control voltage V3, namely, when the relation between the threshold voltage and the control voltage is Vth>V3, all the EPROM 21-23 are in OFF state, and the trimming on the resistor R0 to be trimmed is not performed. Also, when the threshold voltage Vth of the EPROM 21-23 has the voltage value lower than the control voltage V3 and higher than the V2, namely, they are in the relation of V3>Vth>V2, the EPROM 23 is turned ON, and the resistor R3 is brought in the state wherein it is connected in parallel with the resistor R0 to be trimmed.
申请公布号 JPS62150758(A) 申请公布日期 1987.07.04
申请号 JP19850289468 申请日期 1985.12.24
申请人 NIPPON DENSO CO LTD 发明人 KAMATA TADASHI
分类号 H01L27/04;H01L21/822;H01L21/8247;H01L29/78;H01L29/788;H01L29/792 主分类号 H01L27/04
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