| 摘要 |
PURPOSE:To improve the infrared ray absorption activity of a semiconductor crystalline substrate enabling the substrate to be heated efficiently in a short time using a lamp annealing process by a method wherein one side of semiconductor crystalline substrate is previously doped with high concentration N-type impurity to increase the conductive electron concentration. CONSTITUTION:The infrared ray absorption activity of a semiconductor crystalline substrate is improved by a method wherein the backside of semiconductor crystalline substrates 6, 7 to be implanted with ion as potential N-type or P-type impurity is previously doped with high concentration N-type impurity to increase the conductive electron concentration so that the semiconductor crystalline substrates may be irradiated with a lamp having spectrum in the infrared ray wavelength region to be heated. In other words, both surfaces A, B of semiconductor crystalline substrate 6, 7 are coated with SiNx, SiO2 or SiNxOy films and then mutual A surfaces are put together while B surfaces are exposed to infrared ray heaters 2. At this time, the B surfaces are previously doped with high concentration N-type impurity subject to the conductive electron concentration exceeding 1X10<18>cm<-3> around the B surfaces.
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