| 摘要 |
PURPOSE:To improve the manufacturing yield of semiconductor integrated circuit device while enabling the device to be highly integrated by a method wherein, before the forming process of a conductive film or an insulating film, another process is set up to form the main surface of semiconductor substrate in the fine region below the conductive film lower than the main surface of semiconductor substrate in the rough region below the former main surface. CONSTITUTION:A conductive film 12C is formed electrically connecting to an extending part of gate electrode 8A, a source region and drain region 9B through a connecting hole 11 while covering an interlayer insulating film 10. At this time, before the forming process of the conductive film 12C, another process is set up to form the main surface of semiconductor substrate 1 in the fine region C wherein the memory cell M below the conductive film 12C is finely arranged lower than the main surface of the rough region H wherein MISFET Qn below the main surface of semiconductor substrate 1 is toughly arranged. Through these procedures, the level of the fine region L is previously lowered so that the difference in levels of photoresist films in the fine region L and the rough region H may be reduced to form the photoresist films in both regions within the focal length.
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