| 摘要 |
PURPOSE:To obtain a semiconductor laser having a window region and long-life with excellent controllability by depositing the multilayer crystal of a semiconductor laser onto a substrate formed in juxtaposed manner to a V-shaped striped groove as a current path through a liquid-phase epitaxial growth method and using the whole as a semiconductor laser element. CONSTITUTION:A pair of grooves 22', 23' are shaped in response to regions as striped parallel grooves formed in a post-process to a P-type GaAs substrate 10. An N-type GaAs current blocking layer 11 is grown in an epitaxial manner onto the substrate 10 by employing a liquid-phase epitaxial growth method so that the grooves 22', 23' are buried completely and the layer thickness of the current blocking layer 11 is brought to 0.8mum at the position of a striped groove 12 formed in the post-process. The V-shaped striped groove 21 having 3mum stripe width and 1mum depth is shaped at a position on the central-line symmetric axis of parallel grooves 22, 23 through etching. Consequently, currents required for oscillating laser beams concentrate to the V-shaped striped groove 21 and flow, thus inhibiting reactive currents which do not contribute to oscillation. Accordingly, a section in the vicinity of the end surface of a laser is formed in window structure, and the absorption of laser beams is suppressed by the window structure, thus acquiring high-output oscillations.
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