| 摘要 |
PURPOSE:To attain the high density of a magnetic bubble memory element by providing a strip pattern made of a nonmagnetic substance to a layer except a layer forming a transfer layer between 'Permalloy(R)' type magnetic bubble transfer lines constituting a minor loop. CONSTITUTION:The strip patterns PS1, PS2 made of a nonmagnetic substance such as Mo or Au are formed respectively along the transfer direction P of a magnetic bubble B on a gap G between magnetic bubble transfer paths m1, m2 adjacent to each other and in a loop of the magnetic bubble transfer paths m1, m2 constituting a minor loop (m) group. The strip patterns PS1, PS2 made of a nonmagnetic substance are provided between the magnetic bubble film LPE and the magnetic bubble transfer pattern PT to apply stress with the magnetic bubble magnetic film LPE, a barrier is generated by the stress to prevent the generation of run-out of the magnetic bubble B between the minor loop m1 and its adjacent minor loop m2. Thus, the bias magnetic field margin is increased and high density is attained.
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