POSITIVE TYPE PHOTORESIST COMPOSITION HAVING IMPROVED HEAT RESISTANCE

摘要

PURPOSE:To obtain a positive type photoresist having superior heat resistance and fit for post-baking at high temp., dry etching, ion implantation and metallic vapor deposition by using cresol-novolak resin having >=160 deg.C softening point. CONSTITUTION:When a positive type photoresist composition contg. an alkali- soluble resin and at least one kind of quinonediazido compound as essential components is produced, cresol-novolak resin having >=160 deg.C softening point is used as the alkali-soluble resin. The amount of the quinonediazido compound is 5-100pts.wt. per 100pts.wt. cresol-novolak resin. In case of <5pts.wt. quinonediazido compound, a high contrast pattern is not obtd. because the difference in solubility in a developer between exposed and unexposed parts is not sufficient. In case of >100pts.wt. quinonediazido compound, a resist film on a substrate is brittle and a pattern is liable to be scratched and peels from the substrate during the handling of the wafer.