| 摘要 |
PURPOSE:To facilitate manufacturing a josephson device which has a minute junction with high dimensional accuracy and has little local variation or the junction dimension by a metbod wherein, after the side walls of the junctio1st superconductor electrode is subjected to anode oxidation to form 2nd insulating layer. CONSTITUTION:After 1st si[ercpmdictpr electrode 12, a tunnel barrier layer 13 and 2nd superconductor electrode 14 are successively formed on a substrate 11, an etching maek 15 is formed on the 2nd superconductoro electrode 14 at the position which is to be a junction to remove the 2nd superconductor electrode 14 and the tunnel barrier layer 13 by dry etching. Then, while the etching mask 15 is being kept, 1st insulating layer 16 is applied and the 1st insulating layer 16 is etched by dry etching so as to cover the side walls of the junction with the 1st insulating layers 16 selectively. Then the exposed surface of the 1st superconductor electrode 12 is subjected to anode oxidation to form 2nd insulatlng layer 17 and, after the etching mask 15 is removed, 3rd superconduotor electrode 18 is formed so as to te contacted electrically with the 2nd superconductor electrode 14. |
