| 摘要 |
PURPOSE:To lower the temp. of a substrate by diluting gaseous starting materials with H2 gas in manufacturing a microcrystalline silicon carbide film by means of a plasma CVD method, a sputtering method, etc. CONSTITUTION:When the microcrystalline silicon carbide film is manufactured, for example, by the plasma CVD method, gaseous silicides such as SiH4 and gaseous carbides such as CH4 are used as the gaseous starting materials. A gaseous mixture consisting of SiH4, CH4, and H2 is introduced into a reaction vessel to undergo glow discharge so as to form a silicon carbide film on the substrate of glass, quartz, stainless steel, etc. At this time, the proportion of the gaseous raw materials is set up at a low value so that rate of dilution of gaseous raw materials with H2 gas is <=0.05. In this way, the silicon carbide film (microcrystalline silicon carbide film) in which crystalline structure is mingled with amorphous structure can be deposited on the substrate set up at a temp. of 500 deg.C or below.
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