发明名称 TARGET MARK FOR ADJUSTING FOCUS OF ELECTRON BEAM
摘要 PURPOSE:To simplyfy the mounting work by a method wherein an intergrated structure is established by laminatedly fixing the second marking member which has a specified thickness with smaller area than that of the first marking member on the first member, and the both marks are formed on the same manufacturing process. CONSTITUTION:Already cut Si upper marks 8a-8d are fixed on the desired position of a wafer 7 with suitable distance by using a liquid adhesive 12. A piece which has been machined to the specified thickness corresponding to the difference in the level is selected for the marking member. Moreover, the upper and lower marking members 7 and 8 have been coated with an electron beam resist 11. After the water 7 is fixed on a cassette holder 15, a target pattern is drawn with an electron beam 10 and developed, the drawn section A and B is formed in a reverse save-shape, and a heavy metal film 16 is evaporated from the surface side of the wafer. They are lifted off to remove the resist completely. After the scripe, the marks made are fixed on the base as reference target marks 7 and 8.
申请公布号 JPS62224022(A) 申请公布日期 1987.10.02
申请号 JP19860065634 申请日期 1986.03.26
申请人 HITACHI LTD 发明人 IWASAKI TERUO
分类号 H01J37/21;H01L21/027;H01L21/30 主分类号 H01J37/21
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