| 摘要 |
PURPOSE:To increase the density of integration by forming polycrystalline Si films or high melting-point metallic silicide films, layers thereof mutually differ, which have an area larger than contact holes and to which an impurity is doped, onto a diffusion layer between the mutually adjacent contact holes. CONSTITUTION:A layer insulating film 13 is shaped to the whole surface, and the predetermined sections of the layer insulating film 13 and a gate insulating film 3 to expose the surface of a source region 7. A polycrystalline Si film 14, to which an impurity such as phosphorus is doped and which is connected to the source region 7 and has a large area, is formed. A layer insulating film 9 is shaped to the whole surface, the prescribed sections of the layer insulating film 9 and the layer insulating film 13 are removed through etching to form contact holes 9a, 9b, and wirings 10, 11 are brought into contact with polycrystalline Si films 12, 14 through the contact holes 9a, 9b. Accordingly, the contact holes 9a, 9b can easily be shaped even when an MOSFET is fined, thus increasing the density of integration of an element.
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