| 摘要 |
PURPOSE:To lower the leakage generation rate of a thin film transistor, and to improve yield by protecting a gate insulating film at the crossed positions of the edge section of a gate electrode and the edge sections of source-drain electrodes by a protective insulating film. CONSTITUTION:A gate electrode 11 is formed onto a glass substrate 10, and a gate insulating film 12, an amorphous Si film 13 and a protective insulating film 14 are deposited continuously in a vacuum through plasma CVD. A P-doped N<+>-a-Si film 15 and source-drain metallic layers 16 are deposited. The gate insulating film 12 at the crossed positions of the edge section of the gate electrode 11 and the edge sections of source-drain electrodes 17, 18 is protected by the protective insulating films at that time, thus preventing damage by an etchant such as hydrofluoric acid on patterning. |
