| 摘要 |
PURPOSE:To detect registering deviation rapidly, accurately and with insignificant personal errors, by evaluating any registering deviation of line-symmetrical first conducting layers based on a length by which the first conducting layers overlap with line-symmetrical contact holes provided in an insulating layer deposited on the first conducting layers. CONSTITUTION:Gate electrodes 23 and 24 are provided in line symmetry in a first conducting layer formed on a semiconductor substrate through an insulating film. An insulating film is deposited thereon. The insulating film is provided with line-symmetrical contact holes 26 and 27 so that the gate electrodes 23 and 24 are connected to electrodes 28 and 29 in a second conducting layer through these contact holes. Any registering deviation between the holes 26, 27 and the electrodes 23, 24 can be detected with an insignificant personal error, based on how much the electrodes 23, 24 overlap with the holes 26, 27. Further, the detection can be performed rapidly and with high precision without evaluating each of the electrodes 23 and 24.
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