发明名称 MANUFACTURE OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To inhibit production of voids in a sealing layer of a molded material, by dropping epoxy resin for forming a resin sealing layer under evacuated conditions, and then setting the resin under atmospheric pressure. CONSTITUTION:While a subassembly l0 brazed to and interposed between electrode members of a pair of lead wires is rotated around the lead wires, epoxy resin M is dropped from the above within the evacuated atmosphere of 0.1-l torr. The resin M is caused to wrap round the assembly 10. Further, the resin M is shaped by centrifugal force under similar evacuated conditions to form a resin sealing layer. After that, the resin scaling layer 4 is set under atmospheric pressure. By processing the epoxy resin within the evacuated atmosphere in this manner, residual voids in the epoxy resin can be decreased substantially. Thus, a semiconductor element having high reliability can be produced easily.
申请公布号 JPS62226634(A) 申请公布日期 1987.10.05
申请号 JP19860068730 申请日期 1986.03.28
申请人 HITACHI LTD;HITACHI HARAMACHI SEMICONDUCTOR LTD 发明人 HIDAKA TOSHIYUKI;KAMIJO HITOSHI;SUDO KATSUHIKO
分类号 H01L21/56 主分类号 H01L21/56
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