| 摘要 |
PURPOSE:To form two types of end shapes to be formed by one dry process by forming two difierent mask patterns on a semiconductor crystal layer by lithography technique. CONSTITUTION:The electrodes of a semiconductor crystal layer is coated with photoresist 2mum thick, developed to form a pattern 10, and first layer resist mask pattern 11 is obtained by emitting far ultraviolet ray and hard baking. The pattern is coated with resist 1.5mum thick, exposed and developed with another mask, formed with second layer resist mask pattern, and a second layer resist mask pattern 13 is formed by emitting far ultraviolet ray and soft baking. Thereafter, a semiconductor laser and a photodetector end working is executed by active ion beam etching in the dry process. Since etching selection ratio of GaAs to resist is large and no reverse movement of the resist occurs at the both end forming parts of the laser and one side edge forming part of reflecting side, effective perpendicular end working can be performed.
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