发明名称 |
Method for making a bipolar transistor and capacitors using doped polycrystalline silicon or metal silicide |
摘要 |
The invention provides a method for making a semiconductor device including a bipolar transistor and a capacitor. An oxide film and a silicon nitride film are formed and patterned on a semiconductor substrate. A layer of polycrystalline silicon or of metal silicide containing an impurity is formed between an emitter electrode and an emitter region of the transistor and between an electrode and a thin oxide film of the capacitor. The doped polycrystalline silicon or metal silicide is then patterned to form a barrier layer protecting the oxide film and an intermediate layer acting as a diffusion source to the underlying substrate.
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申请公布号 |
US4732872(A) |
申请公布日期 |
1988.03.22 |
申请号 |
US19850748711 |
申请日期 |
1985.06.26 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
KOMATSU, SHIGERU |
分类号 |
H01L27/04;H01L21/331;H01L21/822;H01L27/06;H01L29/73;H01L29/94;(IPC1-7):H01L21/225 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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