Semiconductor device comprising a MOS transistor, and method of making the same.

摘要

A semiconductor apparatus comprises a semiconductor body (15, 16) of one conductivity type; a first impurity region (14) of an opposite conductivity type, which is formed in the surface area of the semiconductor body (15, 16); impurity regions (29a and 29b) of the opposite conductivity type, formed in the surface area of the semiconductor body (15, 16), at locations away from the first impurity region (14); second and third impurity regions (17 and 18) of one conductivity type, which serve as source and drain regions, respectively, and are formed in the impurity regions (29a and 29b) of an opposite conductivity type, so as to sandwich a channel region; and a gate electrode (20) formed on the channel region, through an insulative layer. In this semiconductor apparatus, the impurity regions of the opposite conductivity type include fourth and fifth impurity regions (29a and 29b), formed in the channel region such that at least parts of the fourth and fifth impurity regions overlap.